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See Technical Specifications

2SK2915 +BOM

General-purpose FET capable of handling high power applications, compliant with RoHS regulations

Manufacturer:

Toshiba
Mfr.Part #:

2SK2915
Datasheet:

2SK2915 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2SK2915

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable 2SK2915 driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the 2SK2915.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	16 A	Rds On - Drain-Source Resistance	400 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	150 W
Channel Mode	Enhancement	Series	2SK2915
Configuration	Single	Fall Time	60 ns
Height	20 mm	Length	15.5 mm
Product Type	MOSFET	Rise Time	50 ns
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	155 ns	Typical Turn-On Delay Time	35 ns
Width	4.5 mm	Unit Weight	0.162260 oz