This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2SK3569 +BOM

Versatile electronic component for a wide range of applicatio

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MOSFET N Channel 600V 10A 4V @ 1mA 750mΩ @ 5A,10V TO-220F(TO-220IS) RoHS

SWITCHING

Source Content uid	2SK3569	Pbfree Code	Yes
Part Life Cycle Code	Lifetime Buy	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Avalanche Energy Rating (Eas)	363 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	10 A
Drain-source On Resistance-Max	0.75 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	40 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	10 A	Rds On - Drain-Source Resistance	750 mOhms
Series	2SK3569	Height	15 mm
Length	10 mm	Product Type	MOSFET
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.5 mm
Unit Weight	0.068784 oz