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2SK3683-01MR +BOM
Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
TO-220F-
Manufacturer:
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Mfr.Part #:
2SK3683-01MR
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Datasheet:
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Part Life Cycle Code:
Not Recommended
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Pin Count:
3
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ECCN Code:
EAR99
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Avalanche Energy Rating (Eas):
245.3 mJ
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EDA/CAD Models:
Availability: 4634 PCS
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2SK3683-01MR General Description
Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Key Features
- 1. High speed switching
- 2. Low on-resistance
- 3. No secondary breadown
- 4. Low driving power
- 5. Avalanche-proof
Specifications
Part Life Cycle Code | Not Recommended | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 245.3 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 500 V |
Drain Current-Max (ID) | 19 A | Drain-source On Resistance-Max | 0.38 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 76 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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In Stock: 4,634
Minimum Order: 1
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