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AT-64023 +BOM

High frequency RF Silicon Bipolar Transistor AT-64023

AT-64023 General Description

RF Transistor NPN 20V 200mA 3W Surface Mount 230 mil Be0

Broadcom Inventory

Key Features

  • High Output Power:
  • 27.5 dBm Typical P1 dB at 2.0␣ GHz
  • 26.5 dBm Typical P1 dB at 4.0␣ GHz
  • High Gain at 1 dB Compression:
  • 12.5 dB Typical G1 dBat 2.0␣ GHz
  • 9.5 dB Typical G1 dBat 4.0␣ GHz
  • 35% Total Efficiency
  • Emitter Ballast Resistors
  • Hermetic, Metal/Beryllia Stripline Package
Broadcom Original Stock
Broadcom Inventory

Specifications

Product Category RF Transistors (BJT) Series -
Packaging Bulk -
Mounting-Type 3W Power-Max 200mA
Transistor-Type - Electric current collectors -

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