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ATF-50189-BLK +BOM

Frequency Range 400 MHz to 3.9 GHz

Manufacturer:

Broadcom Limited
Mfr.Part #:

ATF-50189-BLK
Datasheet:

ATF-50189-BLK Datasheet (PDF)
Transistor Type:

EpHEMT
Technology:

GaAs
Operating Frequency:

2 GHz
Gain:

15.5 dB
EDA/CAD Models:

Request Free CAD Models for ATF-50189-BLK

ATF-50189-BLK General Description

The ATF-50189-BLK is a high-linearity GaAs transistor with a continuous drain current of 1A and a drain-source voltage of 7V. It has a threshold voltage of 380mV and a power dissipation of 2.25W. The transistor is housed in an SOT-89 case with 4 pins and has a gain bandwidth of 400MHz to 2GHz. With a maximum voltage of 800mV and a typ voltage of 4.5V, this transistor is suitable for a variety of applications. It is a single transistor package with an SMD marking of 0Gx and a termination type of SMD. This product does not contain any SVHC as of June 20, 2011

Key Features

High linearity and P1dB
Low noise figure
Excellent uniformity

Application

RF Communications
Wireless
Consumer Electronics
Portable Devices

Specifications

Product Category	RF JFET Transistors	Transistor Type	EpHEMT
Technology	GaAs	Operating Frequency	2 GHz
Gain	15.5 dB	Vds - Drain-Source Breakdown Voltage	7 V
Vgs - Gate-Source Breakdown Voltage	- 5 V to 800 mV	Id - Continuous Drain Current	1 A
Maximum Drain Gate Voltage	- 5 V to + 1 V	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.25 W
Mounting Style	SMD/SMT	Configuration	Single
Forward Transconductance - Min	2294 mmho	Moisture Sensitive	Yes
NF - Noise Figure	1.1 dB	P1dB - Compression Point	29 dBm
Product	RF JFET Transistors	Product Type	RF JFET Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Type	GaAs EpHEMT	Unit Weight	0.004603 oz