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See Technical Specifications

ATF-55143-BLKG +BOM

ATF-55143-BLKG is a 4-pin SOT-343 RF amplifier from Broadcom, designed for low noise operation

Manufacturer:

BROADCOM INC
Mfr.Part #:

ATF-55143-BLKG
Datasheet:

ATF-55143-BLKG Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8541.21.00.75
EDA/CAD Models:

Request Free CAD Models for ATF-55143-BLKG

ATF-55143-BLKG General Description

The ATF-55143-BLKG is a cutting-edge Low Noise Pseudomorphic high electron mobility transistor (pHEMT) tailored for the demands of radio frequency (RF) and microwave applications. Operating seamlessly within the 100 MHz to 6 GHz frequency range, this device offers a remarkable fusion of low noise figure, high gain, and top-notch linearity performance

Key Features

High linearity performance
Single Supply Enhancement Mode Technology [1]
Very low noise fgure
Excellent uniformity in product specifcations
400 micron gate width
Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead Free Option Available
Specif cations
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise fgure
17.7 dB associated gain
Lead-free option available

Application

AMPLIFIER

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.21.00.75
Case Connection	SOURCE	Configuration	SINGLE
DS Breakdown Voltage-Min	5 V	Drain Current-Max (ID)	0.1 A
FET Technology	HIGH ELECTRON MOBILITY	Highest Frequency Band	C BAND
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	0.27 W
Power Gain-Min (Gp)	15.5 dB	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	20	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON