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ATF-54143-BLKG +BOM

RF JFET Transistors Transistor GaAs Single Voltage

ATF-54143-BLKG General Description

RF Mosfet 3 V 60 mA 2GHz 16.6dB 20.4dBm SOT-343

Key Features

  • High linearity performance
  • Enhancement Mode Technology [1]
  • Low noise figure
  • Excellent uniformity in product specifications
  • 800 micron gate width
  • Low cost surface mount small plastic package SOT- 343 (4 lead SC-70)
  • Tape-and-Reel packaging option available
  • Lead-free option available.
  • Specifi cations
  • 2 GHz; 3V, 60 mA (Typ.)
  • 36.2 dBm output 3rd order intercept
  • 20.4 dBm output power at 1 dB gain compression
  • 0.5 dB noise figure
  • 16.6 dB associated gain

Specifications

Product Category RF JFET Transistors Transistor Type EpHEMT
Technology GaAs Operating Frequency 2 GHz
Gain 16.6 dB Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 5 V Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V
Id - Continuous Drain Current 120 mA Maximum Operating Temperature + 150 C
Pd - Power Dissipation 725 mW Mounting Style SMD/SMT
Configuration Single Dual Source Forward Transconductance - Min 410 mmho
NF - Noise Figure 0.5 dB P1dB - Compression Point 20.4 dBm
Product RF JFET Transistors Product Type RF JFET Transistors
Factory Pack Quantity 100 Subcategory Transistors
Type GaAs EpHEMT

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