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BC547 +BOM

NPN Epitaxial Silicon Transistor

BC547 General Description

The onsemi BC547 is a NPN Epitaxial Silicon Transistor from the Discrete & Power Modules category, specifically designed for General Purpose and Low VCE(sat) applications. This device is ideal for use in amplifier circuits, DC motor control, switching power supplies, and other applications where high-frequency performance and low saturation voltage are required. The BC547 offers a number of advantages, including its high current gain (110 min), high-power dissipation (500mW max), and high-frequency operation (300MHz transition frequency). Additionally, the device's operating temperature range is 150°C (TJ), making it suitable for use in demanding environments.

Key Features

  • High current gain (hFE) - 110 min
  • High-power dissipation (Pmax) - 500mW
  • High-frequency operation (fT) - 300MHz
  • Low saturation voltage (Vce(sat)) - 600mV @ 5mA, 100mA
  • Operating temperature range (TJ) - 150°C

Application

  • Amplifier circuits
  • DC motor control
  • Switching power supplies
  • Audio and communication systems

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 250 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 500 mW
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series BC547
Continuous Collector Current 100 mA Height 5.33 mm
Length 5.2 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Technology Si Width 4.19 mm
Unit Weight 0.007055 oz Package/Case TO-92-3

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