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TO-220AB Tube Power Transistor with N-Channel Silicon
TO-220-3Manufacturer:
Infineon
Mfr.Part #:
IRF3205
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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The IRF3205 MOSFET, part of the esteemed IR MOSFET family, symbolizes a new era of power management solutions. By employing cutting-edge silicon processes, this MOSFET caters to a broad spectrum of applications ranging from DC motors and inverters to SMPS units, lighting fixtures, load switches, and portable electronics. Designers are presented with a rich selection of devices within the IR MOSFET family, allowing for tailored solutions to meet specific project demands. With industry-standard footprints available in both surface mount and through-hole packages, the IRF3205 facilitates seamless integration into designs while ensuring optimal performance and reliability
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 110 A | Rds On - Drain-Source Resistance | 8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 65 ns | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Rise Time | 101 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 50 ns |
Typical Turn-On Delay Time | 14 ns | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
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