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IRF3205 +BOM

TO-220AB Tube Power Transistor with N-Channel Silicon

IRF3205 General Description

The IRF3205 MOSFET, part of the esteemed IR MOSFET family, symbolizes a new era of power management solutions. By employing cutting-edge silicon processes, this MOSFET caters to a broad spectrum of applications ranging from DC motors and inverters to SMPS units, lighting fixtures, load switches, and portable electronics. Designers are presented with a rich selection of devices within the IR MOSFET family, allowing for tailored solutions to meet specific project demands. With industry-standard footprints available in both surface mount and through-hole packages, the IRF3205 facilitates seamless integration into designs while ensuring optimal performance and reliability

Key Features

  • High power N-channel MOSFET
  • 55V drain-source voltage
  • Up to 110A continuous drain current
  • 0.0035 ohm on-resistance
  • Fast switching speed
  • Low gate charge
  • TO-220 package
  • RoHS compliant
  • Suitable for high power applications

Application

  • Used in motor controls
  • Essential for power supplies
  • Common in DC converters
  • Applicable in inverters
  • Vital for battery management
  • Utilized in solar systems

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 110 A Rds On - Drain-Source Resistance 8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 200 W
Channel Mode Enhancement Configuration Single
Fall Time 65 ns Height 15.65 mm
Length 10 mm Product Type MOSFET
Rise Time 101 ns Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 14 ns Width 4.4 mm
Unit Weight 0.068784 oz

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