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BCX52-10 +BOM

Trans GP BJT PNP 60V 1A 500mW 4-Pin(3+Tab) SOT-89 T/R

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BCX52-10 General Description

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX55.

Key Features

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • AEC-Q101 qualified

Application

  • Medium Power Switching or Amplification Applications
  • AF driver and output stages

Specifications

Description Bipolar Transistors - BJT Datasheet Datasheet
Availability N/A Technology Si
Mounting Style SMD/SMT Transistor Polarity PNP
Configuration Single Maximum DC Collector Current 1 A
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Pd - Power Dissipation 1 W
Gain Bandwidth Product fT 125 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C

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