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2SC1815-Y +BOM

Trans GP BJT NPN 50V 0.15A 400mW 3-Pin TO-92

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2SC1815-Y General Description

NPN Silicon Epitaxial Transistor Designed

Key Features

  • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

Specifications

Source Content uid 2SC1815-Y Part Life Cycle Code Obsolete
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 0.15 A Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V Configuration SINGLE
DC Current Gain-Min (hFE) 120 JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 125 °C Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.4 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 80 MHz VCEsat-Max 0.25 V

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