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See Technical Specifications

BCX5616TA +BOM

Diodes Inc BCX5616TA NPN Transistor: 1A, 80V, 3-Pin SOT-89 Package

Manufacturer:

Diodes Incorporated
Mfr.Part #:

BCX5616TA
Datasheet:

BCX5616TA Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for BCX5616TA

BCX5616TA General Description

Efficiency is key with the BCX5616TA, as its high power conversion efficiency helps reduce energy consumption and operating costs. This makes it a cost-effective solution for industrial applications where energy efficiency is a priority. Rest assured, this rectifier module meets industry standards for safety and performance, ensuring compliance with regulations and providing a reliable power solution for industries of all kinds

Key Features

BVCEO> 45V, 60V & 80V
Ic = 1A Continuous Collector Current
ICM = 2A Peak Pulse Current
Low Saturation Voltage VCE(sat) <500mV @ 0.5A
Gain Groups 10 and 16
Epitaxial Planar Die Construction
Complementary PNP Types: BCX51, 52, and 53
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	55 Weeks
Case Connection	COLLECTOR	Collector Current-Max (IC)	1 A
Collector-Base Capacitance-Max	25 pF	Collector-Emitter Voltage-Max	80 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	100
JESD-30 Code	R-PSSO-F3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	2 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	FLAT
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	150 MHz	VCEsat-Max	0.5 V