This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BDS12 +BOM

Trans GP BJT NPN 100V 15A 3-Pin(3+Tab) TO-257AB

Manufacturer:

TT Electronics
Mfr.Part #:

BDS12
Datasheet:

BDS12 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

100 V
EDA/CAD Models:

Request Free CAD Models for BDS12

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BDS12 General Description

FEATURES• HERMETIC METAL OR CERAMIC PACKAGES• HIGH RELIABILITY• MILITARY AND SPACE OPTIONS• SCREENING TO CECC LEVELS• FULLY ISOLATED (METAL VERSION)APPLICATIONS• POWER LINEAR AND SWITCHING APPLICATIONS• GENERAL PURPOSE POWER

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	3 V
Pd - Power Dissipation	43.75 W	Gain Bandwidth Product fT	3 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	15 A	DC Collector/Base Gain hfe Min	15 at 5 A, 150 V
DC Current Gain hFE Max	150 at 5 A, 150 V	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si