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See Technical Specifications

BFX85 +BOM

Small signal transistors

Manufacturer:

Tt Electronics
Mfr.Part #:

BFX85
Datasheet:

BFX85 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Models:

Request Free CAD Models for BFX85

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BFX85 General Description

Efficiency is a key feature of the BFX85, thanks to its low collector-emitter saturation voltage and low base-emitter saturation voltage. This allows for efficient operation in low-power applications and effective switching. The maximum power dissipation of 10W ensures that the transistor can handle moderate power levels without risk of overheating, while the transition frequency of 50MHz indicates its ability to operate at higher frequencies

Key Features

Advanced materials application
High durability capability
Low thermal resistance
Excellent shock resistance

Application

Reliable technology for all sectors
Advanced solutions for every need
Efficiency and innovation combined

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	100 V
Collector-Emitter Saturation Voltage	1 V	Maximum DC Collector Current	1 A
Pd - Power Dissipation	800 mW	Gain Bandwidth Product fT	50 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 175 C
Continuous Collector Current	1 A	DC Collector/Base Gain hfe Min	15 at 1 A, 10 V
Height	6.6 mm	Length	9.4 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	9.4 mm