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BLX15 +BOM

RF Bipolar Transistors RF Transistor

Key Features

  • Gold Metalization
  • Emitter Ballasting

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar Power
Technology Si Transistor Polarity NPN
Operating Frequency 28 MHz DC Collector/Base Gain hfe Min 15
Collector- Emitter Voltage VCEO Max 55 V Emitter- Base Voltage VEBO 4 V
Continuous Collector Current 10 A Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 200 C Mounting Style Through Hole
Maximum DC Collector Current 20 A Pd - Power Dissipation 233 W
Product Type RF Bipolar Transistors Subcategory Transistors
Type RF Bipolar Power

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In Stock: 7,072

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