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BLW98 +BOM
NPN Silicon RF Power Bipolar Transistor optimized for Ultra High Frequency Band
SOT-122A-
Manufacturer:
Advanced Semiconductor, Inc.
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Mfr.Part #:
BLW98
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Datasheet:
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Transistor Type:
Bipolar Power
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Technology:
Si
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Transistor Polarity:
NPN
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Operating Frequency:
860 MHz
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EDA/CAD Models:
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Availability: 7072 PCS
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Key Features
- diffused emitter ballasting resistors for an optimum temperature profile;
- gold sandwich metallization ensures excellent reliability.
- The transistor has a1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud.
Specifications
Product Category | RF Bipolar Transistors | Transistor Type | Bipolar Power |
Technology | Si | Transistor Polarity | NPN |
Operating Frequency | 860 MHz | DC Collector/Base Gain hfe Min | 15 |
Collector- Emitter Voltage VCEO Max | 25 V | Emitter- Base Voltage VEBO | 3.5 V |
Continuous Collector Current | 2 A | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Mounting Style | Screw Mount |
Maximum DC Collector Current | 4 A | Pd - Power Dissipation | 21.5 W |
Product Type | RF Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Type | RF Bipolar Power |
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In Stock: 7,072
Minimum Order: 1
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