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BLW98 +BOM

NPN Silicon RF Power Bipolar Transistor optimized for Ultra High Frequency Band

Key Features

  • diffused emitter ballasting resistors for an optimum temperature profile;
  • gold sandwich metallization ensures excellent reliability.
  • The transistor has a1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud.

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar Power
Technology Si Transistor Polarity NPN
Operating Frequency 860 MHz DC Collector/Base Gain hfe Min 15
Collector- Emitter Voltage VCEO Max 25 V Emitter- Base Voltage VEBO 3.5 V
Continuous Collector Current 2 A Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Mounting Style Screw Mount
Maximum DC Collector Current 4 A Pd - Power Dissipation 21.5 W
Product Type RF Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Type RF Bipolar Power

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