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BLF7G22L-250PB,112 +BOM
High-power RF amplifier device for wireless communication system
SOT-539A-
Manufacturer:
-
Mfr.Part #:
BLF7G22L-250PB,112
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Datasheet:
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Transistor Polarity:
N-Channel
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Technology:
Si
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Id - Continuous Drain Current:
65 A
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Vds - Drain-Source Breakdown Voltage:
65 V
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Availability: 7072 PCS
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Avaq Semiconductor offers the highly versatile and reliable BLF7G22L-250PB,112 driver, produced by NXP. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the BLF7G22L-250PB,112.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 65 A |
Vds - Drain-Source Breakdown Voltage | 65 V | Operating Frequency | 2.17 GHz |
Gain | 18.5 dB | Output Power | 70 W |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Configuration | Dual | Product Type | RF MOSFET Transistors |
Subcategory | MOSFETs | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 13 V | Vgs th - Gate-Source Threshold Voltage | 1.9 V |
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In Stock: 7,072
Minimum Order: 1
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