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BLV25 +BOM

Transistor RF Bipolar RF

Key Features

  • internally matched input for wideband operation and high power gain;
  • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
  • gold-metallization ensures excellent reliability.

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar Power
Technology Si Transistor Polarity NPN
Operating Frequency 108 MHz DC Collector/Base Gain hfe Min 15
Collector- Emitter Voltage VCEO Max 33 V Emitter- Base Voltage VEBO 4 V
Continuous Collector Current 17.5 A Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Mounting Style Screw Mount
Pd - Power Dissipation 220 W Product Type RF Bipolar Transistors
Subcategory Transistors Type RF Bipolar Power
Unit Weight 0.461866 oz

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