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BSC009NE2LS5I +BOM

Small signal transistor with low noise and high gain characteristic

Avaq Semiconductor offers the highly versatile and reliable BSC009NE2LS5I driver, produced by Infineon Technologies Corporation. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  BSC009NE2LS5I.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.00135 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
IDpuls max 868.0 A Mounting SMD
Ptot max 74.0 W Polarity N
RthJA max 50.0 K/W RthJC max 1.7 K/W
VDS max 25.0 V RDS (on) max 1.35 mΩ
Special Features Monolithically Integrated Schottky-like Diode ID max 217.0 A
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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