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BSC030N03MSGATMA1 +BOM

OptiMOS technology enables efficient energy conversion in industrial control systems

BSC030N03MSGATMA1 General Description

N-Channel 30 V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 2.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 73 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 69 W
Channel Mode Enhancement Tradename OptiMOS
Series OptiMOS 3M Configuration Single
Fall Time 9.4 ns Forward Transconductance - Min 48 S
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 19 ns Width 5.15 mm
Part # Aliases BSC030N03MS G SP000311506 Unit Weight 0.004250 oz

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