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BSC036NE7NS3G +BOM

Versatile 8-pin TDSON package for easy design-in

BSC036NE7NS3G General Description

Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Specifications

Source Content uid BSC036NE7NS3G Part Life Cycle Code Active
Pin Count 8 Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0036 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES Terminal Finish TIN
Terminal Form NO LEAD Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON

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