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See Technical Specifications

BSC039N06NS +BOM

High-performance N-Channel Silicon Power FET capable of handling 19A current and up to 60V voltage, featuring a low resistance of 0

Manufacturer:

INFINEON
Mfr.Part #:

BSC039N06NS
Datasheet:

BSC039N06NS Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for BSC039N06NS

BSC039N06NS General Description

N-Channel 60 V 19A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Specifications

Source Content uid	BSC039N06NS	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	50 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.0039 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	44 pF
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	69 W
Pulsed Drain Current-Max (IDM)	400 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.8V @ 36µA	Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 30 V
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	BSC039