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See Technical Specifications

BSC040N08NS5 +BOM

Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R

Manufacturer:

INFINEON
Mfr.Part #:

BSC040N08NS5
Datasheet:

BSC040N08NS5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

120 mJ
EDA/CAD Models:

Request Free CAD Models for BSC040N08NS5

BSC040N08NS5 General Description

One of the key highlights of the OptiMOS™ 5 80 V MOSFET is its impressive RDS(on) reduction of up to 43% compared to the previous generation. This enhancement translates to improved efficiency and power management capabilities, making it an ideal choice for demanding power supply requirements. Whether you are looking to optimize your telecom infrastructure or enhance the performance of your industrial machinery, this MOSFET offers unparalleled performance and versatility

Specifications

Source Content uid	BSC040N08NS5	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	120 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	80 V
Drain Current-Max (ID)	19 A	Drain-source On Resistance-Max	0.004 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	400 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	IDpuls max	484.0 A
Mounting	SMD	Ptot max	104.0 W
Polarity	N	RthJA max	50.0 K/W
RthJC max	1.2 K/W	VDS max	80.0 V
RDS (on) max	4.0 mΩ	ID max	121.0 A
VGS(th) max	3.8 V	VGS(th) min	2.2 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C