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BSC042NE7NS3G +BOM

Features include: OptiMOS 3 technology for efficient power management, 75V voltage rating, and 100A current capacity in an N-channel MOSFET

BSC042NE7NS3G General Description

N-Channel 75 V 19A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Specifications

Source Content uid BSC042NE7NS3G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 220 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 100 A Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 40 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Series OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 37.5 V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number BSC042

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