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BSC047N08NS3G +BOM

Transistor MOSFET N-channel with 80V voltage rating

Manufacturer:

Infineon
Mfr.Part #:

BSC047N08NS3G
Datasheet:

BSC047N08NS3G Datasheet (PDF)
IDpuls Max:

400.0 A
Ptot Max:

125.0 W
VDS Max:

80.0 V
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for BSC047N08NS3G

BSC047N08NS3G General Description

The BSC047N08NS3 G is a N-channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including DC-DC converters, motor control, and power supplies. This MOSFET features a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V. It has a low on-state resistance of 8mΩ, which helps to reduce power losses and improve efficiency in high-current applications. The BSC047N08NS3 G also has a gate threshold voltage of 2.5V and a gate charge of 58nC, making it easy to drive with standard digital logic circuits. It has a low input capacitance of 2850pF and a fast switching speed, which allows for efficient operation at high frequencies.This MOSFET is housed in a TO-263 package, which provides excellent thermal performance and reliable operation in demanding environments. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.

Key Features

This is a powerful MOSFET transistor.
Designed for high efficiency power switching
Suitable for rugged and harsh environments
Rugged Silicon Carbide structure ensures reliability
This device features low on-resistance and gate charge
Maximum drain-source voltage is 80V

Application

Reliable motor control solution
Efficient in industrial automation
Great for power efficiency

Specifications

IDpuls max	400.0 A	Ptot max	125.0 W
VDS max	80.0 V	Polarity	N
RDS (on) max	4.7 mΩ	ID max	100.0 A
VGS(th) max	3.5 V	VGS(th) min	2.0 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C