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BSC057N08NS3G +BOM

Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm

BSC057N08NS3G General Description

MOSFET OPTIMOS 3 POWER-TRANISTOR, 80 V Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Key Features

  • Advanced EMI shielding
  • Low thermal resistance
  • Reliable operation ensured
  • Safe operating conditions guaranteed

Application

  • Process automation
  • Hydropower systems
  • Soft starter control

Specifications

IDpuls max 400.0 A Ptot max 114.0 W
VDS max 80.0 V Polarity N
RDS (on) max 5.7 mΩ ID max 100.0 A
VGS(th) max 3.5 V VGS(th) min 2.0 V
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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In Stock: 4,924

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.477 $1.48
10+ $1.255 $12.55
30+ $1.135 $34.05
100+ $0.996 $99.60
500+ $0.817 $408.50
1000+ $0.789 $789.00

The prices below are for reference only.

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