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BSC080N03LSG +BOM

0 Volt N-CHANNEL Power MOSFET with 0.012 ohm

BSC080N03LSG General Description

The outstanding features of the BSC080N03LSG include its low gate charge and high efficiency, which contribute to reduced power loss and enhanced thermal performance. This allows for optimal operation and reliability, even in demanding environments. Additionally, its compact form factor and high switching frequency capability make it a versatile option for compact designs and high-performance applications

Specifications

Source Content uid BSC080N03LSG Pbfree Code Yes
Part Life Cycle Code Obsolete Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 15 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.012 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 212 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V Power Dissipation (Max) 2.5W (Ta), 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number BSC080

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In Stock: 4,925

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