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BSC090N03MSGATMA1 +BOM

High-speed switching transistor ideal for audio amplifiers and motor control application

BSC090N03MSGATMA1 General Description

N-Channel 30 V 12A (Ta), 48A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 48 A Rds On - Drain-Source Resistance 7.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 24 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 32 W
Channel Mode Enhancement Tradename OptiMOS
Series OptiMOS 3M Configuration Single
Fall Time 5.4 ns Forward Transconductance - Min 28 S
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Rise Time 5 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 8.8 ns
Typical Turn-On Delay Time 9 ns Width 5.15 mm
Part # Aliases BSC090N03MS G SP000313120 Unit Weight 0.004358 oz

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