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BSC340N08NS3G +BOM

N-channel power MOSFET rated for automotive applications with a maximum voltage of 80V and a current capacity of 7A

BSC340N08NS3G General Description

N-Channel 80 V 7A (Ta), 23A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount PG-TDSON-8-5

Specifications

Source Content uid BSC340N08NS3G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 20 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 23 A Drain-source On Resistance-Max 0.034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 32 W
Pulsed Drain Current-Max (IDM) 92 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40 Transistor Application SWITCHING
Transistor Element Material SILICON Series OptiMOS™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 34mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12µA Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 756 pF @ 40 V
Power Dissipation (Max) 2.5W (Ta), 32W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number BSC340

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