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BSM300GB120DLC +BOM
Advanced N-CH IGBT technology enables high-speed switching and reduced energy losse
62 mm-
Manufacturer:
-
Mfr.Part #:
BSM300GB120DLC
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Datasheet:
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Product:
IGBT Silicon Modules
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Configuration:
Half Bridge
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Collector- Emitter Voltage VCEO Max:
1.2 kV
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Collector-Emitter Saturation Voltage:
2.1 V
Availability: 3078 PCS
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BSM300GB120DLC General Description
IGBT Module Half Bridge 1200 V 625 A 2500 W Chassis Mount Module
Specifications
Product Category | IGBT Modules | Product | IGBT Silicon Modules |
Configuration | Half Bridge | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 2.1 V | Continuous Collector Current at 25 C | 625 A |
Gate-Emitter Leakage Current | 400 nA | Pd - Power Dissipation | 2.5 kW |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Height | 30.5 mm | Length | 106.4 mm |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Chassis Mount |
Product Type | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs | Technology | Si |
Width | 61.4 mm | Part # Aliases | SP000095949 BSM300GB120DLCHOSA1 |
Unit Weight | 13.009699 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 3,078
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $252.095 | $252.10 |
30+ | $241.871 | $7,256.13 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for BSM300GB120DLC, guaranteed quotes back within 12hr.
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