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BSP88H6327XTSA1 +BOM

BSP88 by INFINEON: SMD MOSFET, NFET, 240V, 350mA, 6 Ohms, 150°C, TO-261

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSP88H6327XTSA1
Datasheet:

BSP88H6327XTSA1 Datasheet (PDF)
Series:

SIPMOS®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

240 V
EDA/CAD Models:

Request Free CAD Models for BSP88H6327XTSA1

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BSP88H6327XTSA1 General Description

The BSP88H6327XTSA1 from Infineon Technologies is a robust power management IC that offers versatility and reliability for a wide range of applications. With its wide input voltage range of 4.5V to 55V, this IC is ideal for use in automotive, industrial, and consumer electronics where varying power sources are common. Its maximum output current of 3A and adjustable output voltage from 0.8V to 45V make it a flexible solution for different power supply requirements

Key Features

Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, halogen-free
Qualified according to automotive standards
PPAP capable
Low R
DS(on)
Small packages save PCB space
Best-in-class quality and reliability

Application

Automotive
Lighting
Battery management
Load switch
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	SIPMOS®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	240 V	Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V	Rds On (Max) @ Id, Vgs	6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id	1.4V @ 108µA	Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	95 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSP88H6327	RHoS	yes
PBFree	yes	HalogenFree	yes