This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BSS138W-7-F +BOM

BSS138W-7-F is an N-channel MOSFET with a SOT323 package, designed to operate at voltages up to 50V and currents up to 0.2A

Manufacturer:

Diodes Incorporated
Mfr.Part #:

BSS138W-7-F
Datasheet:

BSS138W-7-F Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for BSS138W-7-F

BSS138W-7-F General Description

The BSS138W-7-F is a small signal N-channel MOSFET transistor that is well-suited for general-purpose switching applications in digital circuits. With a maximum drain-source voltage rating of 50V and a continuous drain current of 220mA, this transistor delivers reliable performance in various electronic systems. Its low on-resistance of 3.5 ohms makes it ideal for low voltage and low power applications, ensuring efficient operation. Housed in a compact SOT-323 package, the BSS138W-7-F offers space-saving advantages for designs with limited space, while its gate-source voltage of ±8V and threshold voltage of 1 to 2V provide compatibility with a diverse range of circuitry. With its fast switching speed, this transistor is suitable for applications requiring quick response times, making it a valuable component for digital circuit design

Key Features

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.21.00.95
Factory Lead Time	63 Weeks	Additional Feature	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	50 V
Drain Current-Max (ID)	0.2 A	Drain-source On Resistance-Max	3.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	8 pF
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	0.2 W	Power Dissipation-Max (Abs)	0.2 W
Qualification Status	Not Qualified	Reference Standard	UL RECOGNIZED
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON