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Compact SOT-package for reduced board space usag
SOT323Manufacturer:
Mfr.Part #:
BSS209PWH6327XTSA1
Datasheet:
RHoS:
yes
PBFree:
yes
HalogenFree:
yes
Technology:
Si
EDA/CAD Models:
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The BSS209PWH6327XTSA1 is a highly innovative power MOSFET developed by Infineon, offering unmatched performance and quality. Its enhancement mode and avalanche rating make it a reliable choice for various applications. Furthermore, it is designed with Pb-free lead plating, aligning with RoHS requirements and demonstrating its commitment to environmental sustainability. The small signal packages have been approved to AEC Q101 standards, ensuring their durability and reliability for use in automotive, consumer, eMobility, motor control, notebook, and onboard charger applications
RHoS | yes | PBFree | yes |
HalogenFree | yes | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 630 mA |
Rds On - Drain-Source Resistance | 550 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 1 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Series | BSS209 |
Configuration | Single | Fall Time | 4.6 ns |
Forward Transconductance - Min | 0.87 S | Height | 0.9 mm |
Length | 2 mm | Product Type | MOSFET |
Rise Time | 7 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 6 ns | Typical Turn-On Delay Time | 2.6 ns |
Width | 1.25 mm | Part # Aliases | BSS209PW H6327 SP000750498 |
Unit Weight | 0.000212 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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