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See Technical Specifications

BSS84-7-F +BOM

MOSFETP50V0.13ASOT23, RL - BSS84-7-F

Manufacturer:

Diodes Incorporated
Mfr.Part #:

BSS84-7-F
Datasheet:

BSS84-7-F Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for BSS84-7-F

BSS84-7-F General Description

The BSS84-7-F is a P Channel MOSFET with a continuous drain current of 130mA and a drain source voltage of -50V. The on resistance is 10ohm with a test voltage of -5V, and the threshold voltage is -800mV. The transistor is packaged in a SOT-23 case with 3 pins, and has a maximum power dissipation of 300mW. It operates in a temperature range from -55°C to +150°C

Key Features

Optimized for high density
Improved reliability factor
Laser trimmed characteristics
Customizable for specific use
High efficiency ratio achieved
Suitable for advanced applications

Application

Audio amplifiers
Low-power ICs
Voltage regulators

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	50 V
Id - Continuous Drain Current	130 mA	Rds On - Drain-Source Resistance	10 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	280 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 mW
Channel Mode	Enhancement	Series	BSS84
Configuration	Single	Forward Transconductance - Min	0.05 S
Height	1 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time	18 ns	Typical Turn-On Delay Time	10 ns
Width	1.3 mm	Unit Weight	0.000282 oz