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The BUX87 is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
TO-126Manufacturer:
Mfr.Part #:
BUX87
Datasheet:
Transistor Type:
NPN
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
450 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 20mA, 200mA
EDA/CAD Models:
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The BUX87 is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors | Series | - |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 450 V | Vce Saturation (Max) @ Ib, Ic | 1V @ 20mA, 200mA |
Current - Collector Cutoff (Max) | 100µA | DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 40mA, 5V |
Power - Max | 40 W | Frequency - Transition | 20MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | BUX87 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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