This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

CSD18540Q5B +BOM

Ideal for high-current circuitry with low resistance

Manufacturer:

TI
Mfr.Part #:

CSD18540Q5B
Datasheet:

CSD18540Q5B Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for CSD18540Q5B

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CSD18540Q5B General Description

The CSD18540Q5B stands out as a top-tier NexFET™ power MOSFET, tailored for a multitude of power management tasks. Boasting a reputation for outstanding power efficiency and a sleek, space-saving design, this MOSFET is a standout performer in its class. Crafted using cutting-edge silicon process technology, it guarantees unwavering performance and durability in any scenario

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	2.2 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	41 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	188 W	Channel Mode	Enhancement
Tradename	NexFET	Series	CSD18540Q5B
Configuration	Single	Development Kit	BOOSTXL-DRV8305EVM, DRV8704EVM
Fall Time	3 ns	Height	1 mm
Length	6 mm	Product Type	MOSFET
Rise Time	9 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time	20 ns	Typical Turn-On Delay Time	6 ns
Width	5 mm	Unit Weight	0.004254 oz