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CSD19536KTT +BOM

Product CSD19536KTT is a NexFET™ power MOSFET, featuring an N-channel design with a voltage rating of 100V

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CSD19536KTT General Description

N-Channel 100 V 200A (Ta) 375W (Tc) Surface Mount TO-263 (DDPAK-3)

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 272 A
Rds On - Drain-Source Resistance 2.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 118 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Tradename NexFET Series CSD19536KTT
Configuration Single Fall Time 6 ns
Forward Transconductance - Min 329 S Height 4.7 mm
Length 9.25 mm Moisture Sensitive Yes
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 13 ns Width 10.26 mm
Unit Weight 0.077603 oz

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In Stock: 4,804

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.745 $2.74
10+ $2.389 $23.89
30+ $2.164 $64.92
100+ $1.936 $193.60
500+ $1.832 $916.00
1000+ $1.788 $1,788.00

The prices below are for reference only.

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