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DF100R07W1H5FPB53BPSA2 +BOM

Advanced Insulated Gate Bipolar Transistor Technology for Reliable Performance

DF100R07W1H5FPB53BPSA2 General Description

IGBT Module Trench Field Stop 2 Independent 650 V 40 A Chassis Mount Module

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Specifications

Product Category IGBT Modules Product IGBT Silicon Carbide Modules
Configuration Dual Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.35 V Continuous Collector Current at 25 C 40 A
Gate-Emitter Leakage Current 100 nA Pd - Power Dissipation -
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 20 V Mounting Style Press Fit
Product Type IGBT Modules Series Trenchstop IGBT5 H5
Factory Pack Quantity 30 Subcategory IGBTs
Technology SiC Tradename TRENCHSTOP ~ EasyPACK ~ CoolSiC ~ PressFIT
Part # Aliases DF100R07W1H5FP_B53 SP001629710 Unit Weight 0.846575 oz

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