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DF120R12W2H3B27BOMA1 +BOM

IGBT Module Three Phase Inverter 1200 V 50 A 180 W Chassis Mount Module

DF120R12W2H3B27BOMA1 General Description

IGBT Module Three Phase Inverter 1200 V 50 A 180 W Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Low switching losses
  • Fast silicon diode 1200 V
  • Al
  • 2
  • O
  • 3
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
Infineon Technologies Corporation Original Stock

Application

  • Solutions for photovoltaic energy systems

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series -
IGBT Type - Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 50 A
Power - Max 180 W Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 2.35 nF @ 25 V
Input Standard NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount
Base Product Number DF120R12 RHoS yes
PBFree yes HalogenFree no
Product Category IGBT Modules Product Type IGBT Modules
Subcategory IGBTs Part # Aliases DF120R12W2H3_B27 SP001025032

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DF120R12W2H3B27BOMA1 Datasheet PDF

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