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DMN60H080DS-7 +BOM

Small Signal Field-Effect Transistor, 0.07A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

DIODES
Mfr.Part #:

DMN60H080DS-7
Datasheet:

DMN60H080DS-7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

75 Weeks
EDA/CAD Models:

Request Free CAD Models for DMN60H080DS-7

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DMN60H080DS-7 General Description

MOSFET, N-CH, 600V, 0.07A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 70mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 67ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 700mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	75 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	0.07 A	Drain-source On Resistance-Max	290 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	80 mA	Rds On - Drain-Source Resistance	100 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	1.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.1 W
Channel Mode	Enhancement	Fall Time	158 ns
Forward Transconductance - Min	76 mS	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns	Typical Turn-On Delay Time	7 ns
Unit Weight	0.000282 oz