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250V, 3.5 Ohm, N-Channel, Depletion Mode, Vertical DMOS FET.
8-DFN (5x5)Manufacturer:
Mfr.Part #:
DN2625DK6-G
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
HTS Code:
8541.29.00.95
EDA/CAD Models:
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The DN2625DK6-G is a depletion-mode transistor that leverages advanced vertical DMOS technology and a silicon-gate manufacturing process to deliver superior performance in power handling and input impedance. Its unique design incorporates the benefits of both bipolar transistors and MOS devices, making it an ideal choice for applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. With two MOSFETs in an 8-lead DFN package, the DN2625DK6-G offers flexibility and reliability for various switching and amplifying tasks. Trust this transistor for consistent operation, free from thermal issues and secondary breakdown challenges
Source Content uid | DN2625DK6-G | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 22 Weeks |
Additional Feature | LOW THRESHOLD | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 250 V |
Drain Current-Max (ID) | 1.1 A | Drain-source On Resistance-Max | 3.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 70 pF |
JESD-30 Code | R-PDSO-N8 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 8 |
Operating Mode | DEPLETION MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 3.3 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 30 ns | Turn-on Time-Max (ton) | 30 ns |
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