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DN2625DK6-G +BOM

250V, 3.5 Ohm, N-Channel, Depletion Mode, Vertical DMOS FET.

DN2625DK6-G General Description

The DN2625DK6-G is a depletion-mode transistor that leverages advanced vertical DMOS technology and a silicon-gate manufacturing process to deliver superior performance in power handling and input impedance. Its unique design incorporates the benefits of both bipolar transistors and MOS devices, making it an ideal choice for applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. With two MOSFETs in an 8-lead DFN package, the DN2625DK6-G offers flexibility and reliability for various switching and amplifying tasks. Trust this transistor for consistent operation, free from thermal issues and secondary breakdown challenges

Key Features

    • Low input current ripple
    • High-quality electrolytic capacitors
    • Precise voltage regulation

Specifications

Source Content uid DN2625DK6-G Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Factory Lead Time 22 Weeks
Additional Feature LOW THRESHOLD Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 1.1 A Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 70 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Number of Elements 1 Number of Terminals 8
Operating Mode DEPLETION MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 3.3 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form NO LEAD Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 30 ns Turn-on Time-Max (ton) 30 ns

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