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DSS4240T +BOM

Bipolar Transistors - BJT

DIODES Inventory

Key Features

  • BVCEO> 40V
  • IC = 2A High Continuous Collector Current
  • ICM = 3A Peak Pulse Current
  • Low Saturation Voltage 180mV Max @ IC = 1A
  • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance
  • 730mW Power Dissipation
  • Complimentary PNP Type: DSS5240T
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
DIODES Original Stock
DIODES Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series -
Transistor Type NPN Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V
Power - Max 600 mW Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number DSS4240

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