This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

DTC114ESATP +BOM

Small-signal NPN silicon transistor with 0.1A collector current and 50V breakdown voltage

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 50 mA 250 MHz 300 mW Through Hole SPT

BUILT IN BIAS RESISTOR RATIO IS 1

SWITCHING

Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1	Collector Current-Max (IC)	0.1 A
Collector-Emitter Voltage-Max	50 V	Configuration	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	30	JESD-30 Code	R-PSIP-T3
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	0.3 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	250 MHz
VCEsat-Max	0.3 V	Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	50 mA	Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms	Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	500nA	Frequency - Transition	250 MHz
Power - Max	300 mW	Mounting Type	Through Hole
Base Product Number	DTC114