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F3L8MR12W2M1HPB11BPSA1 +BOM

Mosfet Array 1200V (1.2kV) 85A (Tj) Chassis Mount AG-EASY2B

F3L8MR12W2M1HPB11BPSA1 General Description

Mosfet Array 1200V (1.2kV) 85A (Tj) Chassis Mount AG-EASY2B

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Key Features

  • Best in Class packages with 12mm height
  • Combination of leading edge WBG material and Easy module packages
  • Very low module stray inductance
  • Low and equal gate inductances
  • Very symmetrical internal chip layouts
  • Wide RBSOA
  • 1200 V CoolSiC MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • T
  • vjop
  • PressFIT pins
  • Pre-applied TIM
  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio with reduced system costs
  • Reduction of drift caused by dynamic components
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Application

  • Energy Storage Systems
  • Fast EV charging
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays Series EasyPACK™
Technology Silicon Carbide (SiC) Configuration 2 N-Channel (Half Bridge)
FET Feature - Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 85A (Tj) Rds On (Max) @ Id, Vgs 12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id 5.15V @ 40mA Gate Charge (Qg) (Max) @ Vgs 297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 800V Power - Max 20mW
Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount
Base Product Number F3L8MR12 RHoS yes
PBFree yes HalogenFree no

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F3L8MR12W2M1HPB11BPSA1 Datasheet PDF

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