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See Technical Specifications

FMMT493TA +BOM

FMMT493TA is an NPN Bipolar Junction Transistor designed for general-purpose use

Manufacturer:

Diodes Incorporated
Mfr.Part #:

FMMT493TA
Datasheet:

FMMT493TA Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

100 V
EDA/CAD Models:

Request Free CAD Models for FMMT493TA

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FMMT493TA General Description

One key feature of this transistor is its wide operating temperature range, from -55°C to +150°C, making it suitable for use in extreme environmental conditions. The device marking of MT493 helps to easily identify and track this specific transistor model. With a continuous collector current of 1A and a saturation voltage of 300mV, this transistor is capable of handling a wide range of current and voltage requirements

Key Features

BVCEO> 100V
IC = 1A High Continuous Collector Current
ICM = 2A Peak Pulse Current
500mW Power Dissipation
hFE Characterised Up to 2A for High Current Gain Hold Up
Complementary PNP Type: FMMT593
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)

Application

SWITCHING

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	120 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	600 mV
Maximum DC Collector Current	1 A	Pd - Power Dissipation	500 mW
Gain Bandwidth Product fT	150 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	FMMT493
Continuous Collector Current	1 A	Height	1.1 mm
Length	3 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.4 mm
Unit Weight	0.000282 oz