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See Technical Specifications

FMMT717TA +BOM

Small Signal Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon

Manufacturer:

Diodes Incorporated
Mfr.Part #:

FMMT717TA
Datasheet:

FMMT717TA Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for FMMT717TA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FMMT717TA General Description

Featuring a PNP transistor polarity, the FMMT717TA is designed to provide reliable performance in circuits where a -12V collector-emitter voltage is required. It has a power dissipation rating of 625mW and a transition frequency of 110MHz, making it suitable for amplification and switching applications. With a DC collector current of -2.5A and a DC current gain of 45HFE, this transistor offers stable operation under varying load conditions. Moreover, its RoHS compliance underscores its commitment to sustainable manufacturing practices

Key Features

BVCEO > -12V

IC = -2.5A Continuous Collector Current

ICM = -10A Peak Pulse Current

Low Saturation Voltage E.g. -17mV Max @ IC = -100mA.

RCE(sat) = 72m at 2.5A for a low equivalent on-resistance

625mW power dissipation

hFE characterised up to -10A for high current gain hold-up

Complementary NPN Type: FMMT617

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. Green Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP capable (Note 4)

Application

Gate Driving MOSFETs and IGBTs

Load switch

Battery charging

DC-DC conversion

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	34 Weeks
Collector Current-Max (IC)	2.5 A	Collector-Emitter Voltage-Max	12 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	45
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	0.625 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	110 MHz