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See Technical Specifications

FS75R17KE3 +BOM

High-power switching for efficient energy managemen

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

FS75R17KE3
Datasheet:

FS75R17KE3 Datasheet (PDF)
Configuration:

Full Bridge
Voltage - Collector Emitter Breakdown (Max):

1700 V
Current - Collector (Ic) (Max):

130 A
Power - Max:

465 W
EDA/CAD Models:

Request Free CAD Models for FS75R17KE3

Email: [email protected]

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Tel: +852 95804164

FS75R17KE3 General Description

Infineon Technologies' FS75R17KE3 IGBT module represents a breakthrough in power electronic technology. Delivering a current rating of 75A and a voltage rating of 1700V, it stands as a robust and efficient solution for high-power applications. Its compact design, integrated thermal management technology, and built-in protection features ensure reliable and optimal performance in demanding industrial settings. With a low-inductive design that minimizes switching losses, the FS75R17KE3 is perfectly suited for high-speed switching applications such as motor drives, renewable energy systems, and industrial automation equipment

Key Features

High power density
Established Econo module concept
Integrated temperature sensor available
Low stray inductance module design
RoHS-compliant modules
Compact module concept
Optimized customer’s development cycle time and cost
Configuration flexibility
Fast, reliable and low cost mounting concept

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	-
IGBT Type	-	Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1700 V	Current - Collector (Ic) (Max)	130 A
Power - Max	465 W	Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 75A
Current - Collector Cutoff (Max)	5 mA	Input Capacitance (Cies) @ Vce	6.8 nF @ 25 V
Input	Standard	NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C	Mounting Type	Chassis Mount
Base Product Number	FS75R17