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FZT751TA +BOM

FZT751TA is a PNP Bipolar Junction Transistor engineered for general-purpose applications

Manufacturer:

Diodes Incorporated
Mfr.Part #:

FZT751TA
Datasheet:

FZT751TA Datasheet (PDF)
REACH:

Details
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for FZT751TA

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FZT751TA General Description

- The FZT751TA PNP transistor is a high-performance device that offers excellent characteristics for a wide range of applications. With a collector-emitter voltage V(br)ceo of 60V, it provides a robust solution for voltage switching requirements. The transition frequency ft of 140MHz enables high-frequency operation, making it suitable for use in radio frequency (RF) applications. The 2W power dissipation rating ensures reliable performance under normal operating conditions. The DC collector current rating of 3A and DC current gain hFE of 200hFE highlight the transistor's ability to amplify and control current flow effectively

Key Features

BVCEO> -60V
IC= -3A high Continuous Current
ICM= -6A Peak Pulse Current
Low Saturation Voltage VCE(sat) <-300mV @ -1A
Complementary NPN Type: FZT651
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)

Specifications

Product Category	Bipolar Transistors - BJT	REACH	Details
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	80 V	Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	450 mV	Maximum DC Collector Current	3 A
Pd - Power Dissipation	2 W	Gain Bandwidth Product fT	140 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	FZT751	Continuous Collector Current	- 3 A
Height	1.65 mm	Length	6.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1000
Subcategory	Transistors	Technology	Si
Width	3.7 mm	Unit Weight	0.003951 oz