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FZT853TA +BOM

Product FZT853TA is a NPN bipolar transistor with a power rating of 3W at 100V and a current rating of 2A at 100V and 6A at 2V

Manufacturer:

Diodes Incorporated
Mfr.Part #:

FZT853TA
Datasheet:

FZT853TA Datasheet (PDF)
REACH:

Details
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for FZT853TA

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Tel: +852 95804164

FZT853TA General Description

The FZT853TA from Diodes Incorporated is a versatile PNP bipolar transistor designed for a wide range of electronic applications. With a maximum continuous collector current of 3A and a power dissipation of 2W, this transistor can handle various switching and amplification tasks with ease. Its voltage rating of -100V ensures reliable performance in different circuit configurations

Key Features

FZT853TA is a high-gain, low-resistance silicon transistor
Collector current of 1A with voltage rating of 30V
Power dissipation of 1.25W maximum
TO-236AB SOT-23 package for surface mount only

Application

Reliable performance in industrial systems
Automotive electronics solution
Versatile PNP Bipolar Transistor

Specifications

Product Category	Bipolar Transistors - BJT	REACH	Details
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	100 V
Collector- Base Voltage VCBO	200 V	Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	340 mV	Maximum DC Collector Current	6 A
Pd - Power Dissipation	3 W	Gain Bandwidth Product fT	130 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	FZT853	Continuous Collector Current	6 A
DC Collector/Base Gain hfe Min	20 at 10 A, 2 V	DC Current Gain hFE Max	100
Height	1.65 mm	Length	6.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1000
Subcategory	Transistors	Technology	Si
Width	3.7 mm	Unit Weight	0.003951 oz