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GT30J121(Q) +BOM
Compact and powerful device for high-reliability power management
TO-3P(N)-
Manufacturer:
-
Mfr.Part #:
GT30J121(Q)
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
600 V
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EDA/CAD Models:
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Availability: 7072 PCS
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GT30J121(Q) General Description
IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 30 A |
Pd - Power Dissipation | 170 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | GT30J121 |
Continuous Collector Current Ic Max | 30 A | Height | 19 mm |
Length | 15.9 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 50 | Subcategory | IGBTs |
Width | 4.8 mm | Unit Weight | 0.238311 oz |
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In Stock: 7,072
Minimum Order: 1
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